The effect of post-oxidation annealing in Ar atmosphere (Ar POA) on 4H-SiC–oxide interfaces has been studied by capacitance to gate-bias voltage measurements and photoemission spectroscopy (PES). It was found from the measurements that the shift of the curve disappears when the Ar POA temperature is higher than 600 °C. On the other hand, angle-resolved x-ray photoelectron spectroscopy measurements revealed that the thickness of the intermediate layers containing oxidation states observed at the interfaces decreases abruptly when the Ar POA temperature exceeds 500 °C. In ultraviolet photoelectron spectra, peaks were changed by Ar POA at temperatures higher than 600 °C, which is the temperature where the shift of the curve disappears in measurements. This shows that the change in bonding by Ar POA is the origin of the shift observed in characteristics. A model of structural changes in the interfaces by Ar POA has been proposed based on the results of PES measurements and those of measurements.
Effect of Ar post-oxidation annealing on oxide–4H-SiC interfaces studied by capacitance to voltage measurements and photoemission spectroscopy
Y. Hijikata, H. Yaguchi, S. Yoshida, Y. Ishida, M. Yoshikawa; Effect of Ar post-oxidation annealing on oxide–4H-SiC interfaces studied by capacitance to voltage measurements and photoemission spectroscopy. J. Vac. Sci. Technol. A 1 March 2005; 23 (2): 298–303. https://doi.org/10.1116/1.1865153
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