Dry etching of and multilayers was carried out in inductively coupled plasmas. An ion-enhanced etch mechanism took a critical role for desorption of chlorine etch products. showed a faster etch rate than at various etch conditions. Anisotropic and smooth features were obtained using a photoresist mask. Sidewall contamination with etch products was observed at a higher concentration . Postetch cleaning of the etched samples in deionized water reduced the chlorine residues substantially.
© 2004 American Vacuum Society.
2004
American Vacuum Society
You do not currently have access to this content.