Dry etching of and multilayers was carried out in inductively coupled plasmas. An ion-enhanced etch mechanism took a critical role for desorption of chlorine etch products. showed a faster etch rate than at various etch conditions. Anisotropic and smooth features were obtained using a photoresist mask. Sidewall contamination with etch products was observed at a higher concentration . Postetch cleaning of the etched samples in deionized water reduced the chlorine residues substantially.
Dry etching of and multilayers in an inductively coupled plasma of mixture
H.-W. Ra, Y. B. Hahn, K. S. Song, M. H. Park, Y. K. Hong; Dry etching of and multilayers in an inductively coupled plasma of mixture. J. Vac. Sci. Technol. A 1 November 2004; 22 (6): 2388–2391. https://doi.org/10.1116/1.1806441
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