Dry etching of and multilayers was carried out in inductively coupled plasmas. An ion-enhanced etch mechanism took a critical role for desorption of chlorine etch products. showed a faster etch rate than at various etch conditions. Anisotropic and smooth features were obtained using a photoresist mask. Sidewall contamination with etch products was observed at a higher concentration . Postetch cleaning of the etched samples in deionized water reduced the chlorine residues substantially.
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2004
American Vacuum Society
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