In this work thin films of hafnium oxide are deposited on substrates by means of atomic layer deposition (ALD) using tetrakis(diethylamino)hafnium and water vapor at substrate temperatures of . Our system capabilities include fast transient delivery of reactive fluids, real-time vapor phase detection (in situ tunable diode laser hygrometer), precursor thermochemical capabilities, and ppt level elemental analysis by inductive coupling plasma mass spectrometry. The composition, purity, and other properties of the films and resulting interfaces are determined using x-ray and Fourier transform infrared spectroscopies, -contrast imaging and electron energy loss spectroscopy in a scanning transmission electron microscope with scale resolution, and spectroscopic ellipsometry. The observed ALD rate is per cycle. The nonuniformity across the film is less than 4%. Negligible carbon contamination is found in the resulting stoichiometric films under all conditions studied. The pulse sequence was optimized to prevent disastrous particulate problems while still minimizing purge times. The film deposition is investigated as a function of substrate temperature and reagent pulsing characteristics. A mild inverse temperature dependence of the ALD rate is observed. The initial stage of the growth is investigated in detail.
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September 2004
Research Article|
September 23 2004
Atomic layer deposition and characterization of hafnium oxide grown on silicon from tetrakis(diethylamino)hafnium and water vapor
Anand Deshpande;
Anand Deshpande
American Air Liquide, Chicago Research Center
, Countryside, Illinois 60525 and Department of Chemical Engineering
, University of Illinois at Chicago, Chicago, Illinois 60607
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Ronald Inman;
Ronald Inman
American Air Liquide, Chicago Research Center
, Countryside, Illinois 60525
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Gregory Jursich;
Gregory Jursich
American Air Liquide, Chicago Research Center
, Countryside, Illinois 60525
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Christos Takoudis
Christos Takoudis
Department of Chemical Engineering
, University of Illinois at Chicago, Chicago, Illinois 60607
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J. Vac. Sci. Technol. A 22, 2035–2040 (2004)
Article history
Received:
April 06 2004
Accepted:
June 14 2004
Citation
Anand Deshpande, Ronald Inman, Gregory Jursich, Christos Takoudis; Atomic layer deposition and characterization of hafnium oxide grown on silicon from tetrakis(diethylamino)hafnium and water vapor. J. Vac. Sci. Technol. A 1 September 2004; 22 (5): 2035–2040. https://doi.org/10.1116/1.1781183
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