Evaluation of Schottky barrier height of $TiN∕p$-type $Si(100)$ Available to Purchase

Zero-bias Schottky barrier height $(ϕBp)$ of reactive-sputtered $TiN(∼40nm)$ on $p$-type $Si(100)$ was determined at room temperature and the effect of heat treatment was investigated by forward current–voltage $(I–V)$ measurements. The $TiN$ remained amorphous following annealing. The zero-bias barrier heights for the as-deposited and annealed specimens were in the range of $0.53–0.64V$⁠. The lower $ϕBp$ values of $0.53–0.54V$ are related to as-deposited and $673K$ annealed specimens, whereas the $0.62–0.64V$ values refer to samples annealed at $773–783K$⁠. Forward $I–V$ measurements of as-deposited $(300K)$ $TiN∕Si$ diodes were performed in the temperature range of $220–285K$⁠. The barrier height was determined by the activation energy method, resulting in $ϕBp=0.58V$⁠.