The evolution of surface morphology and reconstructions induced by reducing epitaxial thin films on were studied using scanning tunneling microscopy (STM). As the films were reduced the surface transformed from to to to and finally to at intermediate stages mixtures of the phases were observed. As the surface structure changed the films became progressively darker indicating a connection between surface structure and bulk reduction. The formation of the and structures from the structure could be explained by the ordering of vacancies created by migration into the bulk into troughs. The ordered troughs gave the surface a stranded appearance in STM images. As the surface was reduced the troughs narrowed to create the surface; reduction of this surface gave way to a surface with all the W ions reduced to Half-height steps due to crystallographic shear planes intersecting the surface characterized the surface. Several defect structures were characteristic of the surfaces including domain boundaries oriented parallel to the strands and along [011], in-plane line defects across strands, wide strands, and crosslinks above strands. Structural models for these defects are proposed based on STM results. The [011] domain boundaries are attributed to the formation of stress domains on a reconstructed surface with uniaxial stress induced by the strands and troughs.
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July 2004
Papers from the 50th International AVS Symposium and Exhibition
2-7 November 2003
Baltimore, Maryland (USA)
Research Article|
July 22 2004
Surface phase transitions and related surface defect structures upon reduction of epitaxial thin films: A scanning tunneling microscopy study Available to Purchase
M. Li;
M. Li
Department of Chemical Engineering, Yale University, New Haven, Connecticut 06520
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E. I. Altman;
E. I. Altman
Department of Chemical Engineering, Yale University, New Haven, Connecticut 06520
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A. Posadas;
A. Posadas
Department of Applied Physics, Yale University, New Haven, Connecticut 06520
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C. H. Ahn
C. H. Ahn
Department of Applied Physics, Yale University, New Haven, Connecticut 06520
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M. Li
E. I. Altman
A. Posadas
C. H. Ahn
Department of Chemical Engineering, Yale University, New Haven, Connecticut 06520
J. Vac. Sci. Technol. A 22, 1682–1689 (2004)
Article history
Received:
October 15 2003
Accepted:
April 05 2004
Citation
M. Li, E. I. Altman, A. Posadas, C. H. Ahn; Surface phase transitions and related surface defect structures upon reduction of epitaxial thin films: A scanning tunneling microscopy study. J. Vac. Sci. Technol. A 1 July 2004; 22 (4): 1682–1689. https://doi.org/10.1116/1.1756880
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