Characteristics of high-k gate dielectric formed by the oxidation of sputtered Hf/Zr/Hf thin films on the Si substrate Available to Purchase

We have investigated the effects of high temperature annealing on the physical and electrical properties of multilayered high-k gate oxide $[HfSixOy/HfO2/intermixed-layer(IL)/ZrO2/intermixed-layer(IL)/HfO2]$ in metal-oxide-semiconductor device. The multilayered high-k films were formed after oxidizing the Hf/Zr/Hf films deposited directly on the Si substrate. The subsequent $N2$ annealing at high temperature (⩾ 700 °C) not only results in the polycrystallization of the multilayered high-k films, but also causes the diffusion of Zr. The latter transforms the $HfSixOy/HfO2/IL/ZrO2/IL/HfO2$ film into the Zr-doped $HfO2$ film, and improves electrical properties in general. However, the thin $SiOx$ interfacial layer starts to form if annealing temperature increases over 700 °C, deteriorating the equivalent oxide thickness.