We report on the fabrication of a film for an all-solid-state thin film microbattery by using a rapid-thermal-annealing (RTA) process. The films were grown by rf magnetron sputtering using a synthesized target in a ratio of 10%. Scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) analysis results showed that the surface layer on the as-deposited film was completely removed by rapid thermal annealing process in oxygen ambient for 20 min. In addition, the thin film microbattery fabricated with the annealed film shows fairly stable cyclability with a specific discharge capacity of 56.49 μAh/cm2 μm. These results show the possibility of the RTA film and rapid thermal annealing process being a promising cathode material and annealing process for thin film microbatteries, respectively.
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July 2004
Research Article|
June 24 2004
Characteristics of rapid-thermal-annealed cathode film for an all-solid-state thin film microbattery
Han-Ki Kim;
Han-Ki Kim
Core Technology Laboratory, Samsung SDI, 575 Shin-dong, Youngtong-Gu, Suwon, Gyeonggi-Do 442-391, Korea
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Young Soo Yoon
Young Soo Yoon
Department of Advanced Fusion Technology (DAFT), Konkuk University, 1 Hwayang-dong, Gwangjin-gu, Seoul 143-701, Korea
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J. Vac. Sci. Technol. A 22, 1182–1187 (2004)
Article history
Received:
October 17 2003
Accepted:
April 26 2004
Citation
Han-Ki Kim, Young Soo Yoon; Characteristics of rapid-thermal-annealed cathode film for an all-solid-state thin film microbattery. J. Vac. Sci. Technol. A 1 July 2004; 22 (4): 1182–1187. https://doi.org/10.1116/1.1763906
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