Single crystalline lithium niobate thin films on diamond are useful for surface acoustic wave devices that operate at gigahertz frequency. The differences in the atomic bonding and crystalline structure between the lithium niobate and diamond and the high interfacial energy were responsible for formation of microcrystalline films of lithium niobate deposited on polycrystalline diamond. We have carried out growth of continuous diamond layer on single crystal lithium niobate by microwave chemical vapor deposition to overcome the above deficiencies. The temperature of the substrate during deposition has been maintained near 700 °C to reduce the loss of lithium from lithium niobate and to reduce the thermal stresses. Characterization by x-ray diffraction and Raman spectroscopy showed that the lithium niobate lattice is preserved without incorporation of carbon and the diamond layer is free from graphitic carbon. The integrated lithium niobate-diamond layered structure is shown to be suitable for surface acoustic wave devices.
Skip Nav Destination
Article navigation
July 2004
Research Article|
May 24 2004
Growth of diamond film on single crystal lithium niobate for surface acoustic wave devices
K. Jagannadham;
K. Jagannadham
Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
Search for other works by this author on:
M. J. Lance;
M. J. Lance
High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Search for other works by this author on:
T. R. Watkins
T. R. Watkins
High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Search for other works by this author on:
J. Vac. Sci. Technol. A 22, 1105–1109 (2004)
Article history
Received:
December 03 2003
Accepted:
March 22 2004
Citation
K. Jagannadham, M. J. Lance, T. R. Watkins; Growth of diamond film on single crystal lithium niobate for surface acoustic wave devices. J. Vac. Sci. Technol. A 1 July 2004; 22 (4): 1105–1109. https://doi.org/10.1116/1.1740770
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Low-resistivity molybdenum obtained by atomic layer deposition
Kees van der Zouw, Bernhard Y. van der Wel, et al.
Low-temperature etching of silicon oxide and silicon nitride with hydrogen fluoride
Thorsten Lill, Mingmei Wang, et al.
Related Content
Interfacial characterization and residual stress analysis in diamond films on Li Nb O 3
J. Vac. Sci. Technol. A (October 2006)
High-frequency surface acoustic wave devices based on LiNbO 3 ∕ diamond multilayered structure
Appl. Phys. Lett. (November 2005)
Residual stresses and clamped thermal expansion in LiNbO3 and LiTaO3 thin films
Appl. Phys. Lett. (September 2012)
Physical investigations of nano and micro lithium-niobate deposited by spray pyrolysis technique
AIP Conf. Proc. (December 2018)
High-frequency surface acoustic wave devices based on epitaxial Z-LiNbO3 layers on sapphire
Appl. Phys. Lett. (April 2019)