This article presents the design and fabrication process of a two-dimensional hydrogenated amorphous silicon photodiode array, developed for low light level sensor applications. Utilization of the single switching diode for signal readout enables simpler device design and fabrication. Since the sensing and switching diodes are formed simultaneously by dry etching the layers deposited over the whole area, the number of masks required in lithography was reduced to six. A significant reduction of the leakage current has been achieved by tailoring defects at the interface and optimizing the plasma processing conditions. Details of device fabrication along with results of the sensor array performance are presented.
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Research Article| May 18 2004
Two-dimensional a-Si:H based sensor array
J. H. Chang;
J. H. Chang, Yu. Vygranenko, A. Nathan; Two-dimensional a-Si:H based sensor array. J. Vac. Sci. Technol. A 1 May 2004; 22 (3): 971–974. https://doi.org/10.1116/1.1691082
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