The application of mechanical-compressive stress during low-temperature annealing has been investigated for the crystallization of SiGe alloys on plastic substrates. It was observed that crystallization of an amorphous Ge/Cu/Ge “sandwich” can occur at temperatures as low as 130 °C with the application of an equivalent compressive strain of 0.05%. By using this sandwich as a seed for crystallization of an underlying amorphous SiGe film, partial crystallization of the film was observed to occur at a temperature of 180 °C, again under an equivalent compressive strain of 0.05%. Without the application of the compressive strain, crystallization was not observed for either system at the temperatures investigated. The atomic percentage of Si in the SiGe alloy was 35% as confirmed by Rutherford backscattering spectroscopy and the partial crystallization of the SiGe layer was verified by scanning electron microscopy, x-ray diffraction, and transmission-electron microscopy analyses.
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May 2004
11th Canadian Semiconductor Technology Conference
18-22 August 2003
Ottawa, Canada
Research Article|
May 17 2004
Low-temperature stress-assisted germanium-induced crystallization of silicon–germanium alloys on flexible polyethylene terephtalate substrates
B. Hekmatshoar;
B. Hekmatshoar
Department of Electrical and Computer Engineering, Thin Film Laboratory, University of Tehran, Tehran, Iran
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D. Shahrjerdi;
D. Shahrjerdi
Department of Electrical and Computer Engineering, Thin Film Laboratory, University of Tehran, Tehran, Iran
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S. Mohajerzadeh;
S. Mohajerzadeh
Department of Electrical and Computer Engineering, Thin Film Laboratory, University of Tehran, Tehran, Iran
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A. Khakifirooz;
A. Khakifirooz
Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139-4307
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M. Robertson;
M. Robertson
Department of Physics, Acadia University, Wolfville NS B4P 2R6, Canada
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A. Tonita;
A. Tonita
Department of Physics, Acadia University, Wolfville NS B4P 2R6, Canada
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J. C. Bennett
J. C. Bennett
Department of Physics, Acadia University, Wolfville NS B4P 2R6, Canada
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J. Vac. Sci. Technol. A 22, 856–858 (2004)
Article history
Received:
September 12 2003
Accepted:
February 23 2004
Citation
B. Hekmatshoar, D. Shahrjerdi, S. Mohajerzadeh, A. Khakifirooz, M. Robertson, A. Tonita, J. C. Bennett; Low-temperature stress-assisted germanium-induced crystallization of silicon–germanium alloys on flexible polyethylene terephtalate substrates. J. Vac. Sci. Technol. A 1 May 2004; 22 (3): 856–858. https://doi.org/10.1116/1.1705581
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