InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with $p-InGaN$ tunneling contact layer Available to Purchase

InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes (LEDs) with $p-In0.23Ga0.77N$ tunneling contact layers were successfully fabricated. Compared to $p-GaN$ layers, it was found that we could achieve a much larger hole concentration in $p-In0.23Ga0.77N$ layers. We could reduce the 20 mA operation voltage from 3.78 to 3.37 V by introducing a 5 nm thick $In0.23Ga0.77N$ layer on top of the $p-GaN$ layer and improve the near-ultraviolet LED output power and lifetime by employing such a $p-In0.23Ga0.77N$ layer.