The influence of film thickness on the material properties of aluminum nitride (AlN) thin films deposited on Pt(111) electrodes has been investigated experimentally by means of x-ray diffraction, dielectric response, atomic force microscopy, interferometry measurement of effective d33, and residual stress measurement. The thickness was varied between 35 nm and 2 μm. Full width at mid-height of the rocking curve decreased from 2.60 to 1.14°, rms roughness increased from 3.8 to 18.6 Å, the effective d33, namely d33,f, from 2.75 to 5.15 pm/V. The permittivity εAlN was stable at 10.2, whereas the dielectric losses decreased from 1% to 0.1%. The breakdown electric field under dc voltages varied between 4.0 and 5.5 MV/cm.

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