Growth and annealing effects of Ge/Cu(111) ultrathin films as deposited at ambient temperature have been studied using Auger electron spectroscopy and low-energy electron diffraction techniques. Ge/Cu(111) system shows a structure up to 5 monolayers as deposited at 300 K. The kinetic energy of Cu Auger electrons shifts to a lower value upon deposition of Ge overlayers. This could be explained by the electric charge transfer between Ge and Cu atoms. From the intensity ratio change of Auger signals significant interdiffusion of Ge/Cu(111) films occurs around 375 K. Owing to the formation of a Cu-rich surface layer, the Cu peak restores to the initial kinetic energy of a clean Cu(111) surface at 500 K.
Skip Nav Destination
Research Article| October 02 2003
Formation and annealing effect for close-packed Ge/Cu(111) layers
J. S. Tsay;
L. W. Chang;
J. S. Tsay, L. W. Chang, A. B. Yang; Formation and annealing effect for close-packed Ge/Cu(111) layers. J. Vac. Sci. Technol. A 1 November 2003; 21 (6): 1892–1894. https://doi.org/10.1116/1.1615972
Download citation file:
Don't already have an account? Register
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Could not validate captcha. Please try again.