Growth and annealing effects of Ge/Cu(111) ultrathin films as deposited at ambient temperature have been studied using Auger electron spectroscopy and low-energy electron diffraction techniques. Ge/Cu(111) system shows a structure up to 5 monolayers as deposited at 300 K. The kinetic energy of Cu Auger electrons shifts to a lower value upon deposition of Ge overlayers. This could be explained by the electric charge transfer between Ge and Cu atoms. From the intensity ratio change of Auger signals significant interdiffusion of Ge/Cu(111) films occurs around 375 K. Owing to the formation of a Cu-rich surface layer, the Cu peak restores to the initial kinetic energy of a clean Cu(111) surface at 500 K.
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