The gas phase doping of hydrogenated amorphous silicon and hydrogenated nanocrystalline silicon thin films deposited on glass and on plastic (polyethylene terephthalate) substrates is reported. Two substrate temperatures were used during deposition: and Films were deposited by radio-frequency plasma-enhanced chemical vapor deposition using phosphine or diborane for - or -type doping, respectively. Similar electronic and structural properties are obtained for the doped films deposited on either substrate. Hydrogen dilution of silane is used to improve the electronic and structural properties of the amorphous films and to obtain nanocrystalline films. The most conductive amorphous films have -type dark conductivity at room temperature and when deposited at and respectively, or -type room-temperature dark conductivity at both substrate temperatures. The most conductive nanocrystalline films deposited at have - and -type dark conductivity at room temperature above while nanocrystalline films deposited at only have -type conductivity higher than at room temperature. Isochronal annealing at temperatures up to showed that the dopants are fully activated at the deposition temperature in doped nanocrystalline samples and that they are only partially activated in amorphous films deposited at low substrate temperatures.
Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition
P. Alpuim, V. Chu, J. P. Conde; Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition. J. Vac. Sci. Technol. A 1 July 2003; 21 (4): 1048–1054. https://doi.org/10.1116/1.1586275
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