The phase transformation of CrN films prepared on (100) Si substrates by cathodic arc plasma deposition was investigated at various temperatures using x-ray diffraction and stress measurements. The films were annealed in a reducing atmosphere over the temperature range of 300–1200 °C. X-ray diffraction results showed that an additional phase appeared both at temperatures above 1100 °C and over temperatures between 500 and 650 °C. Thermodynamics can explain the formation of at temperatures above 1100 °C but not that in the low temperature range. Nevertheless, the residual stresses in the films were determined and found to be relaxed largely over such a low temperature range. The stress states of the films were strongly correlated to the phase transformation of the films. It is concluded that the formation of at such low temperatures is mainly due to a nonthermodynamic factor—large stress relaxation occurring in the films. More experimental proof of the stress relaxation-induced phase transformation is presented.
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Research Article|
April 22 2003
Phase transformation in chromium nitride films
Hong-Ying Chen;
Hong-Ying Chen
Department of Materials Engineering, National Chung Hsing University, 250 Kuo Kuang Road, Taichung 402, Taiwan
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Fu-Hsing Lu
Fu-Hsing Lu
Department of Materials Engineering, National Chung Hsing University, 250 Kuo Kuang Road, Taichung 402, Taiwan
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J. Vac. Sci. Technol. A 21, 695–700 (2003)
Article history
Received:
August 22 2002
Accepted:
February 18 2003
Citation
Hong-Ying Chen, Fu-Hsing Lu; Phase transformation in chromium nitride films. J. Vac. Sci. Technol. A 1 May 2003; 21 (3): 695–700. https://doi.org/10.1116/1.1566787
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