Reactive ion etching of ZnTe has been carried out at various applied rf powers and concentrations. The damage induced during dry etching is characterized by low-temperature photominescence (PL) measurements. It is observed that the PL intensity of the free excitons decreases with increasing applied rf power, which is ascribed to the increase of the surface damage by ion bombardment. The amount of the surface damage can be reduced by adding more in the gas mixture due to the effect of chemical etching.
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Research Article| November 25 2002
Characterization of damage in reactive ion etched ZnTe
Qixin Guo, Yuichi Matsumoto, Tooru Tanaka, Mitsuhiro Nishio, Hiroshi Ogawa; Characterization of damage in reactive ion etched ZnTe. J. Vac. Sci. Technol. A 1 January 2003; 21 (1): 59–61. https://doi.org/10.1116/1.1521962
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