structures are prepared and characterized by electrical measurements. The GaAs (100) surfaces are cleaned and passivated by chemical solutions. A passivation treatment based on ammonium polysulfide is applied, then an insulating layer is deposited by electron-beam evaporation of an amorphous By adjusting the passivation and the insulator deposition parameters, the accumulation and inversion conditions are observed by a capacitance–voltage technique, showing that the Fermi level is unpinned. The interface-states density as calculated using the method of Terman applied to high-frequency characteristics presents a minimum of
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Research Article| May 07 2002
Passivation of GaAs metal–insulator–semiconductor structures by and by evaporation of
A. Jaouad, Ç. Aktik; Passivation of GaAs metal–insulator–semiconductor structures by and by evaporation of . J. Vac. Sci. Technol. A 1 May 2002; 20 (3): 1154–1156. https://doi.org/10.1116/1.1463078
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