Diamonds have been efficiently nucleated on the flash-annealed and reconstructed silicon (100) substrate by hot filament chemical vapor deposition. A relatively high diamond nucleation density of about in the nucleation time of only 20 min was confirmed by a Raman peak at the wave number of and a scanning electron microscope image of the oriented nuclei with square-like shapes. The core-level spectra of and using x-ray photoelectron spectroscopy indicated that the diamond had been nucleated on the C-modified substrate believed to be a SiC layer. If so, this study demonstrates that the diamond can be efficiently nucleated on a high quality SiC surface.
REFERENCES
1.
Diamond: Electronic Properties and Applications, edited by S. P. Lawrence and D. R. Kania (Kluwer, Dordrecht, 1995).
2.
Synthetic Diamond: Emerging CVD Science and Technology, edited by E. S. Karl and P. Dismukes (Wiley, New York, 1993), p. 4.
3.
4.
P.
Wurzinger
, P.
Pongratz
, J.
Gerber
, and H.
Ehrhardt
, Diamond Relat. Mater.
5
, 345
(1996
).5.
R.
Stockel
, M.
Stammler
, K.
Janischowsky
, and L.
Ley
, J. Appl. Phys.
83
, 531
(1998
).6.
7.
8.
B. R.
Stoner
, S. R.
Sahaida
, J. P.
Bade
, P.
Southworth
, and P. J.
Ellis
, J. Mater. Res.
8
, 1334
(1993
).9.
S. D.
Wolter
, B. R.
Stoner
, J. T.
Glass
, P. J.
Ellis
, D. S.
Buharenko
, C. E.
Jenkins
, and P.
Southworth
, Appl. Phys. Lett.
62
, 1215
(1993
).10.
11.
12.
13.
G.
Sanchez
, W. L.
Wang
, M. C.
Polo
, and J.
Esteve
, Diamond Relat. Mater.
7
, 200
(1998
).14.
N.
Jiang
, S.
Kujime
, I.
Ota
, T.
Inaoka
, Y.
Shintani
, H.
Makita
, A.
Hatta
, and A.
Hiraki
, J. Cryst. Growth
218
, 256
(2000
).15.
H.
Kawarada
, C.
Wild
, N.
Herres
, R.
Locher
, P
Koidl
, and H.
Nagasawa
, Appl. Phys. Lett.
81
, 3490
(1997
).16.
S. P.
McGinnis
, M. A.
Kelly
, S. B.
Hagstrom
, and R. L.
Atvis
, Appl. Phys. Lett.
97
, 170
(1996
).17.
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