Diamonds have been efficiently nucleated on the flash-annealed and reconstructed silicon (100) substrate by hot filament chemical vapor deposition. A relatively high diamond nucleation density of about in the nucleation time of only 20 min was confirmed by a Raman peak at the wave number of and a scanning electron microscope image of the oriented nuclei with square-like shapes. The core-level spectra of and using x-ray photoelectron spectroscopy indicated that the diamond had been nucleated on the C-modified substrate believed to be a SiC layer. If so, this study demonstrates that the diamond can be efficiently nucleated on a high quality SiC surface.
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Research Article| January 01 2002
Diamond nucleation enhancement on reconstructed Si(100)
Chu Van Chiem;
Chu Van Chiem, Jung-Hyun Kim, Hyung-Shik Shin, J. M. Seo; Diamond nucleation enhancement on reconstructed Si(100). J. Vac. Sci. Technol. A 1 January 2002; 20 (1): 202–205. https://doi.org/10.1116/1.1427889
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