Diamonds have been efficiently nucleated on the flash-annealed and reconstructed silicon (100) substrate by hot filament chemical vapor deposition. A relatively high diamond nucleation density of about 1010cm−2 in the nucleation time of only 20 min was confirmed by a Raman peak at the wave number of 1332 cm−1 and a scanning electron microscope image of the oriented nuclei with square-like shapes. The core-level spectra of C1s and Si2p using x-ray photoelectron spectroscopy indicated that the diamond had been nucleated on the C-modified substrate believed to be a SiC layer. If so, this study demonstrates that the diamond can be efficiently nucleated on a high quality SiC surface.

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