Effects of photoassisted $O2$ annealing on the properties of $(Ba,Sr)TiO3$ thin films

A photoassisted $O2$ annealing method is proposed to anneal $(Ba0.75Sr0.25)TiO3$ thin films grown by rf magnetron sputtering. A deuterium lamp, which emits strong ultraviolet and vacuum ultraviolet light, was used as the light source of our photoassisted $O2$ annealing system. It was found that we could achieve a leakage current density lower than $3×10−8$ $A/cm2$ at 2 V and a dielectric constant, ε, as high as 158.6 by annealing $(Ba0.75Sr0.25)TiO3$ thin films in this system at $650 °C$ for 2 h.