A photoassisted O2 annealing method is proposed to anneal (Ba0.75Sr0.25)TiO3 thin films grown by rf magnetron sputtering. A deuterium lamp, which emits strong ultraviolet and vacuum ultraviolet light, was used as the light source of our photoassisted O2 annealing system. It was found that we could achieve a leakage current density lower than 3×10−8A/cm2 at 2 V and a dielectric constant, ε, as high as 158.6 by annealing (Ba0.75Sr0.25)TiO3 thin films in this system at 650 °C for 2 h.

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