The interest in jets expanding into a vacuum or a low-density background is raised by the appearance of new technological methods and growing requirements of high technology development. The use of free jets for vacuum technology, including space applications, has a number of aspects. One of the important achievements of the previous investigations is an understanding of jet structures in a variety of gas dynamic conditions. The accumulated knowledge on radial expansion into a vacuum, on the expansion of jets behind axially symmetric and flat sonic, and supersonic nozzles into a vacuum and background from the literature can be used for approximate evaluations. At present, more detailed data can be obtained as the result of computational modeling by continuum and kinetic approaches. Modern gas dynamics has at its disposal effective theoretical methods that open wide possibilities for vacuum technology development. The present article reflects the accumulated knowledge on the structure of jets, calculation of jet parameters, and modern trends in the analysis of low density jets.
Skip Nav Destination
Article navigation
July 2001
The 47th international symposium: Vacuum, thin films, surfaces/interfaces, and processing NAN06
2-6 Oct 2000
Boston, Massachusetts (USA)
Research Article|
July 01 2001
Free jets in vacuum technologies
A. K. Rebrov
A. K. Rebrov
Rarefied Gas Department, Institute of Thermophysics of the Russian Academy of Sciences, Novosibirsk, Russia
Search for other works by this author on:
J. Vac. Sci. Technol. A 19, 1679–1687 (2001)
Article history
Received:
December 12 2000
Accepted:
May 09 2001
Citation
A. K. Rebrov; Free jets in vacuum technologies. J. Vac. Sci. Technol. A 1 July 2001; 19 (4): 1679–1687. https://doi.org/10.1116/1.1382649
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Perspective on breakdown in Ga2O3 vertical rectifiers
Jian-Sian Li, Chao-Ching Chiang, et al.
Surface passivation approaches for silicon, germanium, and III–V semiconductors
Roel J. Theeuwes, Wilhelmus M. M. Kessels, et al.
Growth and optical properties of NiO thin films deposited by pulsed dc reactive magnetron sputtering
Faezeh A. F. Lahiji, Samiran Bairagi, et al.