Polycrystalline films were rf-sputtered on Si substrates coated with and the effects of deposition parameters on the temperature coefficient of resistance (TCR) values were investigated. For the temperature higher than the metal–insulator transition temperature the temperature dependence of resistance can be described by using the small polaron model, and the TCR value increases with the activation energy for the polaron hopping. For the temperature higher than increasing the oxygen or Ca content of the film results in the decrease in resistivity, and TCR value. The resistivity and TCR value are also reduced in large-grained films. Applying a substrate bias can enhance the TCR value.
Effect of composition and microstructure on temperature coefficient of resistance of polycrystalline thin films
Chih-Huang Lai, C. F. Hsu, Y. C. Chin, Chengder Chiang; Effect of composition and microstructure on temperature coefficient of resistance of polycrystalline thin films. J. Vac. Sci. Technol. A 1 July 2001; 19 (4): 1186–1190. https://doi.org/10.1116/1.1351801
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