Polycrystalline La1−xCaxMnO3 films were rf-sputtered on Si substrates coated with SiO2, and the effects of deposition parameters on the temperature coefficient of resistance (TCR) values were investigated. For the temperature higher than the metal–insulator transition temperature (Tp), the temperature dependence of resistance can be described by using the small polaron model, and the TCR value increases with the activation energy Ea for the polaron hopping. For the temperature higher than Tp, increasing the oxygen or Ca content of the film results in the decrease in resistivity, Ea, and TCR value. The resistivity and TCR value are also reduced in large-grained films. Applying a substrate bias can enhance the TCR value.

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