films prepared on Si(100) by chemical vapor deposition and annealed in oxygen gas, both natural abundance and isotope labeled were analyzed by in situ x-ray photoelectron spectroscopy and ex situ time-of-flight secondary ion mass spectroscopy (TOFSIMS). Before annealing at 800 °C, the film was oxygen deficient, i.e., and there was a very small amount of interfacial During annealing in additional Si was oxidized and the approached stoichiometric composition. Based on TOFSIMS depth profiles of -labeled ions, Si at the interface is oxidized during annealing mainly by transfer of O from Ta to Si, not by migration of gas phase through to the unoxidized Si. The atomic oxygen from the dissociative reaction of gas phase is transported through by a vacancy mechanism and replenishes the loss of O from to Si.
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September 2000
Research Article|
September 01 2000
Interfacial silicon oxide formation during oxygen annealing of thin films on Si: Oxygen isotope labeling
H. J. Park;
H. J. Park
Science and Technology Center, University of Texas at Austin, Austin, Texas 78712
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A. Mao;
A. Mao
Science and Technology Center, University of Texas at Austin, Austin, Texas 78712
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D.-L. Kwong;
D.-L. Kwong
Science and Technology Center, University of Texas at Austin, Austin, Texas 78712
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J. M. White
J. M. White
Science and Technology Center, University of Texas at Austin, Austin, Texas 78712
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J. Vac. Sci. Technol. A 18, 2522–2526 (2000)
Article history
Received:
February 17 2000
Accepted:
May 12 2000
Citation
H. J. Park, A. Mao, D.-L. Kwong, J. M. White; Interfacial silicon oxide formation during oxygen annealing of thin films on Si: Oxygen isotope labeling. J. Vac. Sci. Technol. A 1 September 2000; 18 (5): 2522–2526. https://doi.org/10.1116/1.1286717
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