Nitrogen doped silicon (NIDOS) films have been deposited by low-pressure chemical vapor deposition from silane and ammonia at high temperature (750 °C) and the influences of the gas ratio on the films deposition rate, refractive index, stoichiometry, microstructure, electrical conductivity, and thermomechanical stress are studied. The chemical species derived from silylene into the gaseous phase are shown to be responsible for the deposition of NIDOS and/or (silicon rich) silicon nitride. The competition between these two deposition phenomena leads finally to very high deposition rates (≈ 100 nm/min) for low gas ratio Moreover, complex variations of NIDOS film properties are evidenced and related to the dual behavior of the nitrogen atom into silicon, either n-type substitutional impurity or insulative intersticial impurity, according to the Si–N atomic bound. Finally, the use of NIDOS deposition for the realization of microelectromechanical systems is investigated.
Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia
P. Temple-Boyer, L. Jalabert, L. Masarotto, J. L. Alay, J. R. Morante; Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia. J. Vac. Sci. Technol. A 1 September 2000; 18 (5): 2389–2393. https://doi.org/10.1116/1.1286714
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