The lattice damage of a diamond crystal, caused by the analysis beam of helium ions with 2.0 MeV, 3 nA at room temperature, was characterized by nondestructive optical absorption topographic imaging that used position-sensitive scanning spectroscopy in the transmission mode. The result showed that the atomic structure and electronic states in diamond have been significantly changed by the ion beam, even at very low dose or dose rate. The measurement has been applied to the artificial diamond crystal (type Ib) to evaluate how the damage induced by Rutherford backscattering/channeling, and the comparison to ion implantation is given. We found that a high column image, which reflects the defective states in irradiated synthetic diamond, provides a qualitative estimation of damage.
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September 2000
Research Article|
September 01 2000
Damage in diamond produced by analysis beam
Z. Q. Ma;
Z. Q. Ma
Functional Materials Laboratory, Department of Physics, Xinjiang University, Urumqi 830046, People’s Republic of China
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B. X. Liu;
B. X. Liu
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, People’s Republic of China
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H. Naramoto
H. Naramoto
Functional Materials Lab.2, Department of Materials Development, Takasaki Radiation Chemistry Research Establishment, JAERI, Gunma 370-12, Japan
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J. Vac. Sci. Technol. A 18, 2267–2270 (2000)
Article history
Received:
September 23 1999
Accepted:
June 19 2000
Citation
Z. Q. Ma, B. X. Liu, H. Naramoto; Damage in diamond produced by analysis beam. J. Vac. Sci. Technol. A 1 September 2000; 18 (5): 2267–2270. https://doi.org/10.1116/1.1288941
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