We have deposited Ti(C,N) thin films on Si(100) and D2 steel substrates in the temperature range of 200–300 °C using tetrakis diethylamidotitanium (TDEAT) and titanium isopropoxide (TIP) by pulsed dc plasma-enhanced metalorganic chemical vapor deposition (PEMOCVD). Radical formation and ionization behaviors in plasma are analyzed in situ by optical emission spectroscopy at various pulsed bias voltages and gas conditions. and gases are used as carrier gases to compare plasma parameters, and the effect of and as reactive gas is also evaluated by the reduction of the C content of the films. Polycrystalline Ti(C,N) thin films were successfully grown on either D2 steel or Si(100) surfaces with TDEAT at temperatures as low as 200 °C. For TIP, however, only TiOCN thin films were obtained on Si(100) substrates. The best deposition process is evident for and gas atmospheres and bias voltage of 600 V. The higher film hardness is about 1760 0.01, but depends on gas species and bias voltage. Compared to TiN films, the Ti(C,N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85%, with an aspect ratio of more than 3.
Low-temperature growth of Ti(C,N) thin films on D2 steel and Si(100) substrates by plasma-enhanced metalorganic chemical vapor deposition
Jin-Hyo Boo, Cheol Ho Heo, Yong Ki Cho, Jeon-Geon Han; Low-temperature growth of Ti(C,N) thin films on D2 steel and Si(100) substrates by plasma-enhanced metalorganic chemical vapor deposition. J. Vac. Sci. Technol. A 1 July 2000; 18 (4): 1590–1594. https://doi.org/10.1116/1.582390
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