An infrared reflection technique has been developed for the characterization of GaN and GaN/AlGaN epitaxial layers and multilayers. The infrared light is brought to the III-nitride surface with a KRS-5 internal reflection crystal. The technique is complimentary to Raman measurements and provides information on the longitudinal and transverse optical (LO) modes of GaN and AlN. For thin GaN layers, the modes of the thin, 22-nm-thick AlN nucleation layer can be clearly observed in the spectra. The free carrier concentration of the GaN can be characterized by analyzing the LO phonon-plasmon coupled mode present in doped samples. Because the light is multiply reflected in the GaN layer, the technique can potentially detect impurities (such as H or C) in the GaN. The application of this technique to characterize high quality molecular beam epitaxial layers is discussed.
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March 2000
Papers from the ninth canadian semiconductor technology conference
10-13 Aug 1999
Ottawa, Canada
Research Article|
March 01 2000
Infrared characterization of GaN and GaN/AlGaN molecular beam epitaxial layers
J. A. Bardwell;
J. A. Bardwell
Institute for Microstructural Sciences, National Research Council, Ottawa, ON K1A 0R6, Canada
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M. W. C. Dharma-Wardana;
M. W. C. Dharma-Wardana
Institute for Microstructural Sciences, National Research Council, Ottawa, ON K1A 0R6, Canada
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H. Tang;
H. Tang
Institute for Microstructural Sciences, National Research Council, Ottawa, ON K1A 0R6, Canada
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J. B. Webb
J. B. Webb
Institute for Microstructural Sciences, National Research Council, Ottawa, ON K1A 0R6, Canada
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J. Vac. Sci. Technol. A 18, 643–647 (2000)
Article history
Received:
August 13 1999
Accepted:
November 23 1999
Citation
J. A. Bardwell, M. W. C. Dharma-Wardana, H. Tang, J. B. Webb; Infrared characterization of GaN and GaN/AlGaN molecular beam epitaxial layers. J. Vac. Sci. Technol. A 1 March 2000; 18 (2): 643–647. https://doi.org/10.1116/1.582241
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