Compounds of the $CdTe–In2Te3$ system in CdTe–In film grown by the close-spaced vapor transport technique combined with free evaporation

Polycrystalline thin films of CdTe–In were grown by the close-spaced vapor transport technique combined with free evaporation of In. The indium concentration in the samples increased according to the rise in temperature of the In source. X-ray diffraction analysis allowed us to identify the CdTe (α) phase in all samples, together with the $CdIn2Te4$ (β) phase in the samples grown at the highest temperatures of the In source. Auger electron spectroscopy was used to quantify the chemical composition of the films. The sensitivity factors were calculated assuming that the solid solution $(CdTe)1−x(In2Te3)x$ was formed. For samples of low In concentration, the lattice parameter decreased linearly with the molar percent of $In2Te3$ in CdTe. This behavior corroborated the presence of the solid solution.