Polycrystalline thin films of CdTe–In were grown by the close-spaced vapor transport technique combined with free evaporation of In. The indium concentration in the samples increased according to the rise in temperature of the In source. X-ray diffraction analysis allowed us to identify the CdTe (α) phase in all samples, together with the (β) phase in the samples grown at the highest temperatures of the In source. Auger electron spectroscopy was used to quantify the chemical composition of the films. The sensitivity factors were calculated assuming that the solid solution was formed. For samples of low In concentration, the lattice parameter decreased linearly with the molar percent of in CdTe. This behavior corroborated the presence of the solid solution.
Skip Nav Destination
Article navigation
March 2000
Research Article|
March 01 2000
Compounds of the system in CdTe–In film grown by the close-spaced vapor transport technique combined with free evaporation
M. P. Hernández;
M. P. Hernández
IMRE, Univerity of Havana, 10400 Vedado, La Habana, Cuba
Search for other works by this author on:
A. Iribarren;
A. Iribarren
IMRE, Univerity of Havana, 10400 Vedado, La Habana, Cuba
Search for other works by this author on:
M. Zapata Torres;
M. Zapata Torres
CICATA-IPN, Legaria 294 Col. Irrigación, 11500 México, D. F.
Search for other works by this author on:
P. Bartolo;
P. Bartolo
Applied Physics Department, CINVESTAV-IPN, Unidad Mérida, 97310, Mérida, Yuc., México
Search for other works by this author on:
V. Sosa;
V. Sosa
Applied Physics Department, CINVESTAV-IPN, Unidad Mérida, 97310, Mérida, Yuc., México
Search for other works by this author on:
J. L. Peña
J. L. Peña
Applied Physics Department, CINVESTAV-IPN, Unidad Mérida, 97310, Mérida, Yuc., México
Search for other works by this author on:
J. Vac. Sci. Technol. A 18, 435–437 (2000)
Article history
Received:
January 20 1999
Accepted:
November 19 1999
Citation
M. P. Hernández, A. Iribarren, M. Zapata Torres, P. Bartolo, V. Sosa, J. L. Peña; Compounds of the system in CdTe–In film grown by the close-spaced vapor transport technique combined with free evaporation. J. Vac. Sci. Technol. A 1 March 2000; 18 (2): 435–437. https://doi.org/10.1116/1.582205
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00
Citing articles via
Related Content
Band gap energy and valence band splitting of p- CdIn 2 Te 4 crystal by photocurrent spectroscopy
Journal of Applied Physics (March 2004)
Temperature dependence of intensity and peak position from photocurrent response in p- CdIn 2 Te 4 crystal
Journal of Applied Physics (June 2004)
A Study on Annealing Effects of P‐CdIn2Te4 Single Crystal Obtained from Photoluminescence Measurement
AIP Conference Proceedings (February 2004)
The dielectric constant measurement of CdIn2Te4
Journal of Applied Physics (October 1991)
Photoluminescence and photoconductivity in CdIn2Te4
Journal of Applied Physics (November 1995)