The implantation of with 5 MeV ions has been examined as a means of increasing the rate of subsequent reactive ion etching in plasmas. The etch rate of implanted at a dose sufficient to amorphize the substrate ions was ⩽3 times higher than in unimplanted substrates. The measured etch rates in plasmas were essentially independent of the implant dose below ions but increased significantly at and above ions This transition was correlated with the onset of amorphization. In an Ar plasma, the etch rate of was unaffected by prior million electron volt implantation and was an order of magnitude lower than in the plasmas. These results have suggested that the damage induced by million electron volt implantation acted to accelerate the process of ion-enhanced chemical etching in but had no significant influence on the process of physical sputtering in an Ar plasma.
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Research Article| November 01 1999
Enhancement of the etch rate of by prior bombardment with MeV ions
Patrick W. Leech;
Patrick W. Leech, Mark C. Ridgway; Enhancement of the etch rate of by prior bombardment with MeV ions. J. Vac. Sci. Technol. A 1 November 1999; 17 (6): 3358–3361. https://doi.org/10.1116/1.582066
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