The interaction of nitric oxide (NO) on Si-rich β-SiC(100) 3×2 surface reconstruction is investigated by photoemission spectroscopy using Al (1486.6 eV) and Zr (151.4 eV) x-ray lines at Si C N and O core levels. NO exposures are performed at sample temperatures ranging from 25 to 1000 °C. The initial sticking coefficient of the NO molecules is found to be already significant at room temperature, with a dissociative adsorption resulting in Si oxynitride products as The amount of oxynitride is significantly increased at surface temperatures of 500 °C and above. In addition, temperature is found to favor the formation nitrogen-rich oxynitride products. Thermal oxynitridation on the 3×2 reconstruction results in a interface.
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Research Article| September 01 1999
Oxynitridation of cubic silicon carbide (100) surfaces
V. Yu. Aristov;
F. Amy, L. Douillard, V. Yu. Aristov, P. Soukiassian; Oxynitridation of cubic silicon carbide (100) surfaces. J. Vac. Sci. Technol. A 1 September 1999; 17 (5): 2629–2633. https://doi.org/10.1116/1.581922
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