The chemical interaction of adsorbed trimethylgallium and atomic hydrogen was investigated on a powdered silicon dioxide substrate containing various coverages of hydroxyl groups. The adsorption of trimethylgallium occurs nondissociatively at 128 K. Desorption of trimethylgallium occurs near 160 K by a nondissociative route. Atomic hydrogen, produced on a hot tungsten filament, reacts with adsorbed trimethylgallium at 128 K. This reaction produces infrared absorbances characteristic of dimethylgalliumhydride dimers or higher polymers, with Ga–H–Ga bridge bonds with a broad absorbance centered at 1690 These hydrogenated species are much more resistant to subsequent reaction with atomic hydrogen than trimethylgallium. Variations of the surface hydroxyl coverage on the silicon dioxide had no effect on the reaction of trimethylgallium with atomic hydrogen. Surface hydroxyl groups do not react with trimethylgallium below 173 K. The highly dehydroxylated silicon dioxide surface also does not react with trimethylgallium below 173 K.
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May 1999
Research Article|
May 01 1999
Breaking the bond at cryogenic temperatures using atomic hydrogen. Adsorbed trimethylgallium reactivity
Douglas B. Mawhinney;
Douglas B. Mawhinney
Surface Science Center, Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
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John A. Glass, Jr.;
John A. Glass, Jr.
Surface Science Center, Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
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John T. Yates, Jr.
John T. Yates, Jr.
Surface Science Center, Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
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J. Vac. Sci. Technol. A 17, 679–685 (1999)
Article history
Received:
September 21 1998
Accepted:
February 26 1999
Citation
Douglas B. Mawhinney, John A. Glass, John T. Yates; Breaking the bond at cryogenic temperatures using atomic hydrogen. Adsorbed trimethylgallium reactivity. J. Vac. Sci. Technol. A 1 May 1999; 17 (3): 679–685. https://doi.org/10.1116/1.581686
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