Ferroelectric $SrBi2Ta2O9$ thin film deposition at 550 °C by plasma-enhanced metalorganic chemical vapor deposition onto a metalorganic chemical vapor deposition platinum bottom electrode

Ferroelectric bismuth-layer $SrBi2Ta2O9$ (SBT) thin films were prepared on $Pt/SiO2/Si$ substrates by plasma-enhanced metalorganic chemical vapor deposition. The platinum bottom electrode deposited by metalorganic chemical vapor deposition shows a dense smooth state after deposition of SBT films and prevents bismuth diffusion into the platinum layer. The c-axis oriented SBT films were crystallized at a deposition temperature of 550 $°$C. The dielectric constant and dissipation factor of SBT films are 310 and 0.08, respectively, at 100 kHz. The remanent polarization and the coercive field obtained for 180 nm thick $Sr0.9Bi2Ta2O9$ films deposited at 550 $°$C were 15 $μ/cm2$ and 50 kV/cm, respectively, at an applied voltage of 5 V. The leakage current density was about $5.0×10−7$ $A/cm2$ at 250 kV/cm. The films showed fatigue-free characteristics up to $7.0×109$ switching bipolar pulses under 5 V.