Secondary ion coincidence in highly charged ion based secondary ion mass spectroscopy for process characterization

Coincidence counting in highly charged ion based secondary ion mass spectroscopy has been applied to the characterization of selective tungsten deposition via disilane reduction of tungsten hexafluoride on a patterned $SiO2/Si$ wafer. The high secondary ion yield and the secondary ion emission from a small area produced by highly charged ions make the coincidence technique very powerful.