Thin films have been grown on Si(100) and on glassy carbon substrates using a novel atomic oxygen source in a standard molecular beam epitaxy system. The oxygen source produces a flux of hyperthermal oxygen atoms with an ion/atom-ratio through electron stimulated desorption from a Ag alloy surface at an operating pressure Torr. The films were grown at room temperature and analyzed using Rutherford backscattering spectroscopy, x-ray diffraction (XRD), x-ray photoelectron spectroscopy and transmission electron microscopy (TEM). The results show the successful growth of fully stoichiometric films on nonheated Si(100) and on amorphous glassy carbon substrates at a rate of 0.58 m/hr. The XRD and TEM investigations indicate the formation of a mixed amorphous/orthorhombic film structure. Based on the film growth rate, the O flux produced by the electron stimulated desorption atom source is estimated to be This flux value is consistent with other determinations using ion scattering spectroscopy and pyromellitic dianhydride-oxydianiline polyimide (Kapton®) erosion experiments.
Room-temperature growth of thin films using a novel hyperthermal oxygen-atom source
Elmar Wisotzki, Adam G. Balogh, Horst Hahn, John T. Wolan, Gar B. Hoflund; Room-temperature growth of thin films using a novel hyperthermal oxygen-atom source. J. Vac. Sci. Technol. A 1 January 1999; 17 (1): 14–18. https://doi.org/10.1116/1.581547
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