Homoepitaxial films of CdTe were grown on vicinal CdTe(100) surfaces using and precursors in an atmosphere of The vicinal CdTe(100) substrates were misoriented by 0°, 2°, 4°, 6°, and 8° from the (100) direction towards the direction and thus had systematically increasing step densities. The CdTe films grown on these surfaces were single crystalline and epitaxial but had gross surface morphologies that depended on the misorientation of the substrate. Films grown on the CdTe(100)-0° and CdTe(100)-8° substrates were rough while those grown on the CdTe(100)-4° substrate were smooth. The kinetics of film growth were studied through measurements of the overall film growth rates and measurements of precursor adsorption/desorption kinetics. Film growth rates were weakly dependent on the degree of substrate misorientation, increasing slightly with increasing step density. Although the step density determines film morphology, the steps are not active sites for decomposition of precursors and do not participate in the rate determining steps of the growth mechanism. Studies of the surface chemistry of the and precursors show that they are reversibly adsorbed on the vicinal CdTe(100) surfaces, which is quite different from precursor surface chemistry on III–V semiconductors where adsorption tends to be irreversible.
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January 1999
Research Article|
January 01 1999
Homoepitaxial growth of CdTe on vicinal CdTe(100) surfaces: Reaction kinetics and mechanism
Kijung Yong;
Kijung Yong
Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
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Herve Martinez;
Herve Martinez
Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
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Andrew J. Gellman;
Andrew J. Gellman
Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
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Paul J. Sides
Paul J. Sides
Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
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J. Vac. Sci. Technol. A 17, 1–8 (1999)
Article history
Received:
June 17 1998
Accepted:
September 04 1998
Citation
Kijung Yong, Herve Martinez, Andrew J. Gellman, Paul J. Sides; Homoepitaxial growth of CdTe on vicinal CdTe(100) surfaces: Reaction kinetics and mechanism. J. Vac. Sci. Technol. A 1 January 1999; 17 (1): 1–8. https://doi.org/10.1116/1.581545
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