In situ attenuated total reflection Fourier transform infrared spectroscopy was used to study the H bonding on the surfaces of and during plasma enhanced chemical vapor deposition from containing discharges. Well-resolved absorption lines that correspond to the vibrational frequencies commonly associated with surface silicon hydrides were detected. During deposition of films using without dilution, the surface coverage was primarily di- and trihydrides, and there are very few dangling bonds on the surface. In contrast, during deposition of using diluted with the amount of di- and trihydrides on the surface is drastically reduced and monohydrides dominate the surface. Furthermore, the vibrational frequencies of the monohydrides on film surfaces match well with the resonant frequencies of monohydrides on H terminated Si (111) and Si (100) surfaces. The decrease of higher hydrides on the surface upon dilution is attributed to increased dissociation rate of tri- and dihydrides on the surface through reaction with dangling bonds created by increased rate of H abstraction from the surface. Results presented are consistent with being at least one of the precursors of deposition.
Silicon hydride composition of plasma-deposited hydrogenated amorphous and nanocrystalline silicon films and surfaces
Denise C. Marra, Erik A. Edelberg, Ryan L. Naone, Eray S. Aydil; Silicon hydride composition of plasma-deposited hydrogenated amorphous and nanocrystalline silicon films and surfaces. J. Vac. Sci. Technol. A 1 November 1998; 16 (6): 3199–3210. https://doi.org/10.1116/1.581520
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