Pure and conducting thin films were deposited on a Si substrate at 250–450 °C using as a precursor by low pressure metal organic chemical vapor deposition (MOCVD). At a lower deposition temperature, the smoother and denser thin films were deposited. The amount of addition did not seriously affect the properties of the thin film. The thin films which were crack free and well adhered onto the substrates showed very low resistivity of 45–60 μΩ cm. At a lower deposition temperature and a smaller amount of addition, thin films showed better step coverage, indicating that MOCVD thin films from can be applied for an electrode of high dielectric thin films for a capacitor of ultralarge scale integrated dynamic random access memory.
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© 1998 American Vacuum Society.
1998
American Vacuum Society
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