Preparation of high quality $RuO2$ electrodes for high dielectric thin films by low pressure metal organic chemical vapor deposition

Pure and conducting $RuO2$ thin films were deposited on a Si substrate at 250–450 °C using $Ru(C11H19O2)3$ as a precursor by low pressure metal organic chemical vapor deposition (MOCVD). At a lower deposition temperature, the smoother and denser $RuO2$ thin films were deposited. The amount of $O2$ addition did not seriously affect the properties of the $RuO2$ thin film. The $RuO2$ thin films which were crack free and well adhered onto the substrates showed very low resistivity of 45–60 μΩ cm. At a lower deposition temperature and a smaller amount of $O2$ addition, $RuO2$ thin films showed better step coverage, indicating that MOCVD $RuO2$ thin films from $Ru(C11H19O2)3$ can be applied for an electrode of high dielectric thin films for a capacitor of ultralarge scale integrated dynamic random access memory.