Metallic conductive ruthenium oxide thin films have been grown epitaxially on sapphire (01 2) with a cerium oxide buffer layer by pulsed laser deposition. We used transmission electron microscopy, high-resolution electron microscopy, and x-ray diffraction to characterize the growth behavior of the films and the orientation relationship between the films and the substrate. Our electron diffraction and x-ray diffraction studies indicate that the orientation relationships are (200)RuO2//(200)CeO2//(011̄2)Al2O3 and 〈011〉RuO2//〈001〉CeO2//〈22̄01〉Al2O3. All of the interfaces were seen to be atomically sharp by cross-sectional, high-resolution transmission electron microscopy in the as-grown samples. No precipitates or additional phases were found in the films or at their interfaces.

This content is only available via PDF.
You do not currently have access to this content.