Reactive ion etching for AlGalnP/GaInP laser structures

To fabricate the AlGaInP/GaInP strained-multiple-quantum well laser, the reactive ion etching of GaAs, GaInP, AlGaInP, and AlInP in $BCl3/Ar$ discharges was investigated as a function of plasma parameters such as power, pressure, gas flow rate, and reactive composition, as well as etching time. Photoluminescence and Auger electron spectroscopy measurements were used to characterize the damage and surface residues caused by reactive ion etching. We have achieved a highly selective etching of GaAs with underlying GaInP. Selective etching of GaInP with AlInP and a smooth etching surface were also achieved.