Interface formation between reactively sputtered tungsten nitride or titanium nitride metallic films and thermally grown silicon dioxide layers is studied by interrupted growth with on-line Auger electron spectroscopy. For both composite metals, growth proceeds directly without a metal precursor layer. The chemical stability of these and interfaces is investigated by rapid thermal annealing up to 850 °C. The interface is stable up to 650 °C while is stable below 850 °C. Metal–oxide–semiconductor capacitors have been fabricated with and gates and 7.5 nm thick thermal oxide gate dielectrics with interface trap densities, Capacitance–voltage and current–voltage measurements indicate the Fermi level for lies near midgap in Si, while for it lies closer to the valence band.
Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers
B. Claflin, M. Binger, G. Lucovsky; Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers. J. Vac. Sci. Technol. A 1 May 1998; 16 (3): 1757–1761. https://doi.org/10.1116/1.581297
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