Thin -SiC:H films were grown by hot-wire chemical vapor deposition at 200 K on Si(100) using mono-, tri-, and tetramethylsilane as single source precursors. The film structure and thermal reactivity were compared using in situ multiple internal reflection Fourier transform infrared spectroscopy and temperature programmed reaction/desorption. The results indicate that both mono- and trimethylsilane precursors yield films containing mixed silicon hydrides, and mostly intact methyl groups. Tetramethylsilane did not lead to substantial film growth. These results are consistent with a mechanism for film growth involving Si–H bond cleavage. All the films are stable to above 550 K. By 600 K, silane and methylsilanes evolve, following the loss of terminal and groups in the films. At higher temperatures, hydrogen desorption and hydrocarbon evolution are observed. For films grown with monomethylsilane, methane is the main hydrocarbon evolved, but films grown with trimethylsilane yield mainly acetylene. The production of acetylene is consistent with the higher concentration of methyl groups in the trimethylsilane films.
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May 1998
Papers from the 44th national symposium of the AVS
20-24 Oct 1997
San Jose, California (USA)
Research Article|
May 01 1998
Spectroscopic and thermal studies of -SiC:H film growth: Comparison of mono-, tri-, and tetramethylsilane
Moon-Sook Lee;
Moon-Sook Lee
Department of Chemistry, New York University, New York, New York 10003
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Stacey F. Bent
Stacey F. Bent
Department of Chemistry, New York University, New York, New York 10003
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J. Vac. Sci. Technol. A 16, 1658–1663 (1998)
Article history
Received:
October 14 1997
Accepted:
March 02 1998
Citation
Moon-Sook Lee, Stacey F. Bent; Spectroscopic and thermal studies of -SiC:H film growth: Comparison of mono-, tri-, and tetramethylsilane. J. Vac. Sci. Technol. A 1 May 1998; 16 (3): 1658–1663. https://doi.org/10.1116/1.581138
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