Amorphous SiC and films have been deposited by pulsed laser deposition on single crystal silicon substrates by KrF (248 nm) excimer laser ablation of a SiC sintered target in a vacuum system at room temperature using nonreactive, Ar, and reactive, , background gases at different pressures. The pressure range in the growth chamber was from Torr to 80 mTorr. The optical properties and stoichiometry of films were varied by the introduction of a background gas. The resulting films are inspected by spectroellipsometry in the photon-energy range of eV. In situ high resolution x-ray photoemission spectroscopy characterization was performed on every film to obtain the atomic concentration and bonding constitution of the elements as a function of background gas pressure. The ideal stoichiometry for SiC films was obtained at Ar pressures higher than 30 mT. The existence of a new phase, given by was suggested from surface techniques and ellipsometric data in the deposition of films at pressures higher than 30 mTorr.
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Research Article| May 01 1998
Growth of SiC and films by pulsed laser ablation of SiC in Ar and environments
E. C. Samano;
G. Soto, E. C. Samano, R. Machorro, L. Cota; Growth of SiC and films by pulsed laser ablation of SiC in Ar and environments. J. Vac. Sci. Technol. A 1 May 1998; 16 (3): 1311–1315. https://doi.org/10.1116/1.581143
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