Epitaxial growth of 3C–SiC on Si(100) by pulsed supersonic free jets of $Si(CH3)4$ and $Si3H8$

Heteroepitaxial growth of 3C–SiC on Si(100) by pulsed supersonic free jets of $Si(CH3)4$ and $Si3H8$ with various mixture ratios has been investigated. The heteroepitaxy is achieved at the substrate temperature of 900 $°$C without any carbonization process. The films grown by pure $Si(CH3)4$ contain inverse pyramidal pits surrounded by the {111} planes of Si, while {311} faceted pits are formed by mixing $Si(CH3)4$ with a small amount of $Si3H8$⁠. When the $Si3H8/Si(CH3)4$ ratio further increases, pit formation is suppressed and instead Si islands are epitaxially grown from the pit region.