Heteroepitaxial growth of 3C–SiC on Si(100) by pulsed supersonic free jets of and with various mixture ratios has been investigated. The heteroepitaxy is achieved at the substrate temperature of 900 C without any carbonization process. The films grown by pure contain inverse pyramidal pits surrounded by the {111} planes of Si, while {311} faceted pits are formed by mixing with a small amount of . When the ratio further increases, pit formation is suppressed and instead Si islands are epitaxially grown from the pit region.
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