We report on the etching characteristics of GaAs and AlGaAs by gas source molecular beam epitaxy (GSMBE) using a new precursor bisdimethylaminochloroarsine (BDMAAsCl). The etching rate of GaAs is linearly dependent on the BDMAAsCl flow rate. The activation energy of GaAs etching was 0.25 eV. However, etching shows the negative activation energy of at the substrate temperature below 500 °C. The etchings of GaAs and AlGaAs are probably attributed to the formation of GaCl and or respectively. Furthermore, we demonstrated that the BDMAAsCl etching remarkably reduced the interfacial impurity (carbon, oxygen, silicon) density of GSMBE-grown GaAs epilayers/epiready substrates by one order of magnitude compared with trisdimethylaminoarsine cleaning only.
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Research Article| January 01 1998
Etching of GaAs/AlGaAs by bisdimethylaminochlorarsine
Naoya Okamoto, Hitoshi Tanaka; Etching of GaAs/AlGaAs by bisdimethylaminochlorarsine. J. Vac. Sci. Technol. A 1 January 1998; 16 (1): 96–99. https://doi.org/10.1116/1.581017
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