Comprehensive simulations of the processing plasmas used in semiconductor fabrication will depend on the availability of basic data for many microscopic processes that occur in the plasma and at the surface. Cross sections for electron collisions, a principal mechanism for producing reactive species in these plasmas, are among the most important such data; however, electron-collision cross sections are difficult to measure, and the available data are, at best, sketchy for the polyatomic feed gases of interest. While computational approaches to obtaining such data are thus potentially of significant value, studies of electron collisions with polyatomic gases at relevant energies are numerically intensive. In this article, we report on the progress we have made in exploiting large-scale distributed-memory parallel computers, consisting of hundreds of interconnected microprocessors, to generate electron-collision cross sections for gases of interest in plasma simulations.
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January 1998
International workshop on basic aspects of nonequilibrium plasmas interacting with surfaces (BANPIS"97)
26-27 Jan 1998
Shirahama, Wakayama (Japan)
Research Article|
January 01 1998
Parallel computing and the generation of basic plasma data
Vincent McKoy;
Vincent McKoy
Noyes Laboratory of Chemical Physics, California Institute of Technology, Pasadena, California 91125
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Carl Winstead;
Carl Winstead
Noyes Laboratory of Chemical Physics, California Institute of Technology, Pasadena, California 91125
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Chuo-Han Lee
Chuo-Han Lee
Noyes Laboratory of Chemical Physics, California Institute of Technology, Pasadena, California 91125
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J. Vac. Sci. Technol. A 16, 324–328 (1998)
Article history
Received:
April 11 1997
Accepted:
August 24 1997
Citation
Vincent McKoy, Carl Winstead, Chuo-Han Lee; Parallel computing and the generation of basic plasma data. J. Vac. Sci. Technol. A 1 January 1998; 16 (1): 324–328. https://doi.org/10.1116/1.580990
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