The surface of boron-doped layers formed by rapid vapor-phase doping was analyzed by x-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared-attenuated total reflection (FTIR-ATR), to determine the role of the hydrogen carrier gas. Boron doping was carried out with a source gas and a hydrogen carrier gas at 800 and 900 °C. A nitrogen carrier gas was also used for comparison. Using hydrogen carrier gas, no evidence of boron segregation was observed in the XPS spectra. FTIR-ATR analysis confirmed that the hydrogen termination of the surface was maintained during doping. Using nitrogen carrier gas, layers that included segregated boron and silicon nitride were produced on the surface, which led to poor controllability of the boron concentration. When a hydrogen carrier gas is used, the hydrogen termination should promote the surface migration of adsorbed species. The hydrogen carrier gas plays an important role in terminating the silicon dangling bonds, thus preventing excessive chemisorption of boron.
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January 1998
Research Article|
January 01 1998
Role of hydrogen during rapid vapor-phase doping analyzed by x-ray photoelectron spectroscopy and Fourier-transform infrared-attenuated total reflection
Yukihiro Kiyota;
Yukihiro Kiyota
Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo, Japan
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Fumiko Yano;
Fumiko Yano
Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo, Japan
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Seiji Suzuki;
Seiji Suzuki
College of Engineering, Hosei University, Kajino-cho, Koganei, Japan
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Taroh Inada
Taroh Inada
College of Engineering, Hosei University, Kajino-cho, Koganei, Japan
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J. Vac. Sci. Technol. A 16, 1–5 (1998)
Article history
Received:
March 12 1997
Accepted:
October 03 1997
Citation
Yukihiro Kiyota, Fumiko Yano, Seiji Suzuki, Taroh Inada; Role of hydrogen during rapid vapor-phase doping analyzed by x-ray photoelectron spectroscopy and Fourier-transform infrared-attenuated total reflection. J. Vac. Sci. Technol. A 1 January 1998; 16 (1): 1–5. https://doi.org/10.1116/1.580969
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