A new technique for the temperature programmed heating suitable for high resistivity (>1 Ω cm) silicon crystal samples was developed and evaluated. This method, which is based on measurement of the silicon resistance during heating, can be used for investigations that require ultrahigh purity of the crystal and its surface during programmed heating and annealing, since thermocouple and other metallic connections to the crystal are avoided. The method was found to be applicable for automated temperature control above 600 K. The dependence of sample resistance on temperature can be calibrated using a single temperature measurement by pyrometer.

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