Deposition of copper thin films by an alternate supply of CuCl and Zn was examined. Due to a reversible dissolution of Zn into the Cu film, no self-limiting growth characteristic for the atomic layer epitaxy method could be achieved. The resulting films contained about 3 at. % zinc while chlorine residue contents were below 0.5 at. %. The films were polycrystalline consisting of rather coarse grains.
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Research Article| July 01 1997
Deposition of copper films by an alternate supply of CuCl and Zn
Marika Juppo, Mikko Ritala, Markku Leskelä; Deposition of copper films by an alternate supply of CuCl and Zn. J. Vac. Sci. Technol. A 1 July 1997; 15 (4): 2330–2333. https://doi.org/10.1116/1.580743
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