Growth of very low temperature polysilicon film by remote plasma-enhanced chemical-vapor deposition

Silicon thin films have been prepared on $SiO2$ substrates by remote plasma-enhanced chemical-vapor deposition using $H2/SiH4/Ar$ gases. The film properties were found to critically depend on the variations of deposition parameters, which include the $SiH4$ flow rate with a fixed $H2$ flow rate, Ar flow rate, and radio frequency (rf) power. The substrate temperature was fixed at 280±5 °C. The best quality polysilicon film was obtained when the $rfpower/Ar$ ratio was set near 0.5±0.05. In addition, the electrical mobility was observed to increase with the increasing $SiH4$ flow rate. The effects of the deposition parameters variation were discussed to properly account for the observed properties of the thin films studied.