This article focuses on the surface chemistry of an N-containing precursor, dimethylhydrazine (DMH), on Cu. DMH both adsorbs and decomposes on clean Cu at room temperature. N–N, C–N, and N–H bonds are cleaved, resulting in the immediate desorption of and and leaving DMH species that, during subsequent heating, lead to and desorption. There is evidence that groups dehydrogenate to form methylene, , that inserts into Cu–C and Cu–N bonds, and leads to , ; , and . The activation energy of DMH decomposition on the clean surface is about 10.8 kJ/mol. The 300 K reactivity of a clean Cu surface is reduced by repeated DMH doses and temperature programmed desorption. Passivation is attributed to the alteration of active surface sites by small amounts of retained reaction products, presumably containing C, the concentration of which lie below x-ray photoelectron spectroscopy detection limits. DMH decomposition and surface synthesis pathways are discussed.
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May 1997
The 43rd national symposium of the American Vacuum Society
14-18 Oct 1996
Philadelphia, Pennsylvania (USA)
Research Article|
May 01 1997
Surface chemistry of the N-containing precursor dimethylhydrazine on Cu
Y.-M. Sun;
Y.-M. Sun
Department of Chemistry and Biochemistry, Center for Materials Chemistry, The University of Texas at Austin, Austin, Texas 78712
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J. M. White;
J. M. White
Department of Chemistry and Biochemistry, Center for Materials Chemistry, The University of Texas at Austin, Austin, Texas 78712
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A. Kamath;
A. Kamath
Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712
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D. L. Kwong
D. L. Kwong
Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712
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J. Vac. Sci. Technol. A 15, 899–904 (1997)
Article history
Received:
October 01 1996
Accepted:
December 16 1996
Citation
Y.-M. Sun, J. M. White, A. Kamath, D. L. Kwong; Surface chemistry of the N-containing precursor dimethylhydrazine on Cu. J. Vac. Sci. Technol. A 1 May 1997; 15 (3): 899–904. https://doi.org/10.1116/1.580729
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