Inductively coupled plasma (ICP) etching of GaAs, GaP, and InP is reported as a function of plasma chemistry, chamber pressure, rf power, and source power. Etches were characterized in terms of rate and anisotropy using scanning electron microscopy, and root-mean-square surface roughness using atomic force microscopy. ICP etch rates were compared to electron cyclotron resonance etch rates for , , , and plasmas under similar plasma conditions. High GaAs and GaP etch rates (exceeding 1500 nm/min) were obtained in -based plasmas due to the high concentration of reactive Cl neutrals and ions generated as compared to -based plasmas. InP etch rates were much slower and independent of plasma chemistry due to the low volatility of the In etch products. The surface morphology for all three materials was smooth over a wide range of etch conditions.
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May 1997
The 43rd national symposium of the American Vacuum Society
14-18 Oct 1996
Philadelphia, Pennsylvania (USA)
Research Article|
May 01 1997
High-density plasma etching of compound semiconductors
R. J. Shul;
R. J. Shul
Sandia National Laboratories, Albuquerque, New Mexico 87185
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G. B. McClellan;
G. B. McClellan
Sandia National Laboratories, Albuquerque, New Mexico 87185
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R. D. Briggs;
R. D. Briggs
Sandia National Laboratories, Albuquerque, New Mexico 87185
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D. J. Rieger;
D. J. Rieger
Sandia National Laboratories, Albuquerque, New Mexico 87185
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S. J. Pearton;
S. J. Pearton
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
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C. R. Abernathy;
C. R. Abernathy
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
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J. W. Lee;
J. W. Lee
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
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C. Constantine;
C. Constantine
Plasma-Therm Inc., St. Petersburg, Florida 33716
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C. Barratt
C. Barratt
Plasma-Therm Inc., St. Petersburg, Florida 33716
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J. Vac. Sci. Technol. A 15, 633–637 (1997)
Article history
Received:
September 30 1996
Accepted:
October 21 1996
Citation
R. J. Shul, G. B. McClellan, R. D. Briggs, D. J. Rieger, S. J. Pearton, C. R. Abernathy, J. W. Lee, C. Constantine, C. Barratt; High-density plasma etching of compound semiconductors. J. Vac. Sci. Technol. A 1 May 1997; 15 (3): 633–637. https://doi.org/10.1116/1.580696
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